Understanding Characteristics of MOSFET, FET and UJT Experiment

Product Description

Nvis 6512A Understanding Characteristics of MOSFET, FET & UJT is a compact, ready to use experiment board. This is useful for students to plot different characteristics of n-channel MOSFET, n-channel FET and UJT and to understand operation of these power electronics devices in various regions. Using this product student can also evaluate FET parameters (Drain resistance,

Transconductance, and Amplification factor) & UJT parameters (Inter base resistance and intrinsic standoff ratio). In-built DC power supply, voltmeter and ammeter with DPM features make this product easy to operate and can be used as standalone system. Breadboard allows student to construct circuits using external components along with on-board resources

Nvis 6512A , Understanding Characteristics of MOSFET, FET and UJT is an ideal platform to enhance education, training, skills & development amongs our young minds.

Scope of Learning

To study and plot the Drain Characteristics of n channel MOSFET
To study and plot the Transfer Characteristics of n channel MOSFET
To study and plot the V-I characteristics of JFET Evaluation of following parameters of JFET: DC Drain resistance, Transconductance, Amplification factor
To plot the VI characteristics of UJT Evaluation of following parameters of UJT: Intrinsic Stand-off Ratio, Inter base resistance

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